reactive sputtering造句
例句与造句
- Reactive sputter etching system
反应性溅镀蚀刻系统 - Reactive sputtering system
反应性溅镀系统 - Reactive sputtering source
反应溅射源 - Hysteresis in aluminum oxides films growth with pulsed reactive sputtering
铝靶脉冲反应溅射沉积氧化铝薄膜中的迟滞回线的研究 - The designed films of sio2 and sio2 / si are prepared on sample and hemisphere dome of sapphire by radio frequency magnetron reactive sputtering method
利用射频磁控反应溅射法，在蓝宝石试片和半球形头罩上制备出所设计的sio _ 2和sio _ 2 si增透膜系。 - It's difficult to find reactive sputtering in a sentence. 用reactive sputtering造句挺难的
- Through the technology of rf and dc reactive sputtering manufacture , h2s gas sensors have been developed on silicon substrate on which a heater made of pt were attached
通过交流和直流反应溅射，我们以硅基片(表面上有白金加热电极)为基底制作h _ 2s气敏元件。 - The thesis main parts are as followings : ( 1 ) the mechanical properties of the cnx thin film on the various substrate materials by dc magnetron reactive sputtering . ( 2 ) the study of the cnx film structure by x - ray diffraction
文章主要部分介绍、论述、总结了我在做毕业论文期间进行的五方面工作： ( 1 )用直流磁控反应溅射方法在各种材料衬底上沉积cnx超硬薄膜，研究在不同衬底对薄膜的力学性质的影响。 - It was found that the decompose efficiency to solution associated with the number of films layer ; calcine temperature and ph value . some analyses have been performed . tio _ 2 films were also synthesized by reactive sputtering and chemical vapor deposition
通过溶胶凝胶法制备了tio _ 2薄膜对其进行光催化反应实验，发现膜层厚度、薄膜煅烧温度和溶液ph值对降解效率都有直接的影响，并对结果进行分析。 - We researched fabrication at different asputtering and annealing atmosphere , the different process conduced different electrical properties . we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4 . the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc . there are different leakage current mechanism at influence of sil . c ; 5
研究表明，在优化工艺条件下制备的hfo _ 2介质层中，衬底注入条件下由于其较低的体和界面缺陷密度，漏电流的输运机制主要以schottky发射为主; silc效应导致hfoz / si界面缺陷态的增加，从而使得衬底注入条件下，栅泄漏电流机制不仅有schottky发射还有f一p发射机制起主要作用; 5 )初步研究了氮化的hfo : ( hroxny )栅介质的电学特征。 - The experiments show an room temperature in the course of reactive sputtering conduces to restraining the surface reaction between hf02 and si layer ; 2 . we studied different surface progress . comparable with conventional method , the surface with nh4f cleaning step have superior thermal stability with hfo2 , nh4f cleaning step is introduced can reduces leakage current and eot ; 3
栅泄漏电流的减小可归于氧空位缺陷的减小，即高的溅射氧气氛和氧气氛退火有助于减小hfo _ 2栅介质中的氧空位缺陷； 4 )研究了反应溅射制备的hfo _ 2栅介质漏电流机制及其silc效应。 - Water steam was used as oxidant , and the optimum water steam partial pressure is between 1 10 - 4 and 5 . 5 10 - 4 pa . under the optimum growth parameters , a ceo _ 2 seed layer with highly textured degree was successfully prepared . beside the one step process was experimented in this dissertation , the two step process was proposed and studied to further improve the quality of ceo _ 2 seed layer . in the two step process , about 15 nm thick of ce metal layer was deposited on metallic substrate at the first step , then water steam was introduced in the chamber , and the ceo _ 2 thin films were subsequently deposited with reactive sputtering in the
总结出沉积ceo _ 2薄膜的优化工艺条件,当沉积温度为720 - 850 、水蒸汽分压介于1 10 - 4 - 5 . 5 10 - 4pa之间、退火时间40min时,获得了织构程度良好的ceo _ 2种子层薄膜; 3 .由于一步法制备ceo _ 2种子层中水分压范围狭窄,工艺条件难以控制,并且退火延长了薄膜的制备时间,因此,本论文又采用了两步生长法沉积ceo _ 2种子层,即:先在ni - w基带上沉积一层约15nm的金属ce薄膜,再通入氧化气氛(水蒸汽) ,继续进行薄膜沉积。 - ( 4 ) the study of the optical band gap of cnx film by uv - vis spectrophotometer . ( 5 ) by using the microhardness tester , we study the hardness of cnx film on the ceremic substrate by dc magnetron reactive sputtering with the feed ar and n2 flow rate , film thickness , substrate temperature and substrate bias
( 5 )用直流磁控反应溅射法，以陶瓷作为衬底，对在ar和n2不同流量、不同膜厚、不同基片温度和对基片施加不同偏压下沉积的薄膜，用< wp = 4 >显微硬度计研究测试了不同工艺参数下的相应硬度。 - Dlc and a - sic : h films were prepared by the rf glow discharge and the reactive sputtering method respectively . there were two reasons that we chose y rays , ultraviolet ( uv ) photons , and neutrons as radiation sources . one is that y rays , uv photons and neutrons irradiation are serious at outer space and / or nucleus irradiation enviromentthe other is that the study on y rays irradiation on the films is a new and an important directioaotherwisejirnited reports have been made of the investigation on the uv photonsjieutrons irradiation influences on these films
本文分别采用射频( 13 . 56mhz )等离子体cvd及射频反应溅射方法制得了dlc及a - sic ： h薄膜。文中主要选择y射线、紫外光及中子作为辐照源有两方面的原因：一方面，在外层空间， y射线及紫外光辐射十分严重，而在核辐射环境下y射线及中子辐射也不可忽视；另一方面， y射线辐照这两种薄膜完全是一项开创性的工作，同时国内外对紫外光子、中子与这两种薄膜作用的研究也很少。